3-D Device Simulation Using Intelligent Solution Method Control

In this paper, a hybrid solution method is implemented for solving the semiconductor trans-port equations. The hybrid "local Newton" method consists of a combination of the fixed-
point iteration (FPI) and Newton’s methods. The FPI technique is nearly ideally suitedto
solving large, 3-D systems of semiconductor equations on machines of limited computer
memory however,it has certain limitations. This motivates the local Newton method, which
coordinates the use of both the FPI and Newton’s methods, for convergence faster than either
method alone.